Title :
Experimental investigations into the thermal properties of 1.5-1.8-μm InAs/InP quantum dash lasers
Author :
Marko, I.P. ; Adams, A.R. ; Sweeney, S.J. ; Jin, S.R. ; Murdin, B.N. ; Schwertberger, R. ; Somers, A. ; Reithmaie, J.P. ; Forche, A.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
We present what we believe to be the first ever high-pressure and spontaneous emission measurements on quantum dash lasers. The results show that temperature sensitivity of these lasers is caused by nonradiative processes, which depend on the lasing wavelength.
Keywords :
III-V semiconductors; high-pressure techniques; indium compounds; nonradiative transitions; quantum dot lasers; spontaneous emission; thermal properties; thermo-optical effects; 1.5 to 1.8 mum; InAs-InP; InAs/InP lasers; high-pressure measurements; lasing wavelength; nonradiative processes; quantum dash lasers; spontaneous emission measurements; temperature sensitivity; Indium phosphide; Laser theory; Physics; Quantum dot lasers; Quantum dots; Radiative recombination; Spontaneous emission; Temperature dependence; Threshold current; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382755
