Title :
GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence
Author :
Bessho, Y. ; Kano, T. ; Yamaguchi, T. ; Inoue, D. ; Nomura, Y. ; Shono, M.
Author_Institution :
Mater. & Devices Dev. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
We have developed GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence by optimizing the optical confinement in the active layer. A small aspect ratio of 1.3 and a high output power of 200 mW with kink-free operation have been achieved.
Keywords :
III-V semiconductors; gallium compounds; laser beams; optical disc storage; semiconductor lasers; 200 mW; GaN; GaN-based laser diodes; beam divergence; blue-violet laser diodes; high-power laser diodes; kink-free operation; optical confinement; optical disc systems; small aspect ratio; Aluminum gallium nitride; Diode lasers; High speed optical techniques; Laser beams; Light sources; Optical recording; Optical waveguides; Power generation; Space vector pulse width modulation; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382757
