Title :
UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template
Author :
Kamiyama, Satoshi ; Iida, Kazuyoshi ; Kawashima, Takeshi ; Kasugai, Hideki ; Mishima, Shunsuke ; Honshio, Akira ; Miyake, Yasuto ; Iwaya, Motoaki ; Amano, Hiroshi ; Akasaki, Isamu
Author_Institution :
Fac. of Sci. & Technol., Meijo Univ., Nagoya, Japan
Abstract :
We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which was grown on low-dislocation-density AlGaN template. The lasing operation under pulsed injection was achieved with the threshold current of about 200 mA.
Keywords :
III-V semiconductors; aluminium compounds; dislocation density; gallium compounds; high-speed optical techniques; semiconductor growth; semiconductor lasers; ultraviolet sources; wide band gap semiconductors; 200 mA; 350.9 nm; AlGaN; AlGaN template; UV laser diode; lasing operation; low-dislocation-density template; pulsed injection; Aluminum gallium nitride; Current measurement; Diode lasers; Gallium nitride; Optical pulses; Optical waveguides; Pulse measurements; Quantum well devices; Semiconductor diodes; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382758
