Title :
Record-low thresholds of InGaAsN/GaAs SQWs lasers
Author :
Averbeck, R. ; Jaschke, G. ; Geelhaar, L. ; Riechert, H.
Author_Institution :
Corp. Res. Photonics, Infineon Technol., Munchen, Germany
Abstract :
We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; plasma materials processing; quantum well lasers; semiconductor growth; 1430 nm; GaAs; InGaAsN-GaAs; InGaAsN/GaAs lasers; long-wavelength lasers; low-threshold lasers; plasma-assisted MBE; record-low thresholds; semiconductor growth; semiconductor quantum well lasers; Fiber lasers; Gallium arsenide; Laser modes; Laser theory; Optical materials; Plasma sources; Plasma temperature; Plasma waves; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382759
