• DocumentCode
    235512
  • Title

    Transferrable fine pitch probe technology

  • Author

    Liu, Yanbing ; Wright, S.L. ; Dang, B. ; Andry, Paul ; Polastre, R. ; Knickerbocker, J.

  • Author_Institution
    IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2014
  • fDate
    27-30 May 2014
  • Firstpage
    1880
  • Lastpage
    1884
  • Abstract
    Two vertical probe technologies were explored to evaluate wafer-level and 3D stack-level die test at 50 μm pitch. In one approach, Cu probe tips were serially built on a 3D silicon wafer using lithography and wet chemical etching. In a second approach, metal probe tips were fabricated by filling a silicon mold made with anisotropic etching and transferred to a silicon die. Each approach had advantages which were demonstrated through test vehicles. The second approach appears promising to offer a robust, scalable probe technology, highly suited for high speed test of 3D die. As compared to traditional probe technologies, this approach also offers an opportunity toward low cost test at fine pitch.
  • Keywords
    copper; etching; lithography; probes; semiconductor device testing; silicon; 3D silicon wafer; 3D stack-level die test; Cu; anisotropic etching; lithography; silicon die; silicon mold; size 50 mum; test vehicle; transferrable fine pitch probe technology; vertical probe technology; wafer-level die test; wet chemical etching; Accuracy; Contacts; Force; Micromechanical devices; Probes; Silicon; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
  • Conference_Location
    Orlando, FL
  • Type

    conf

  • DOI
    10.1109/ECTC.2014.6897557
  • Filename
    6897557