• DocumentCode
    2355120
  • Title

    4.2 mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition

  • Author

    Nishida, T. ; Takaya, M. ; Kakinuma, S. ; Kaneko, T. ; Shimoda, T.

  • Author_Institution
    Seiko Epson Corp., Nagano, Japan
  • fYear
    2004
  • fDate
    25-25 Sept. 2004
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    We achieved high output power GaInNAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 1261.5 nm. The continuous wave (CW) output power at room temperature reached to 4.2 mW with the slope efficiency of 0.52 W/A.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; semiconductor growth; surface emitting lasers; 1261.5 nm; 20 degC; 4.2 mW; GaInNAs; GaInNAs VCSEL; continuous wave output power; long-wavelength laser; metalorganic chemical vapor deposition; room temperature; semiconductor growth; vertical-cavity surface-emitting lasers; Chemical vapor deposition; Distributed Bragg reflectors; Gallium arsenide; Power generation; Power lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
  • Conference_Location
    Matsue-shi
  • Print_ISBN
    0-7803-8627-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2004.1382761
  • Filename
    1382761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2355120