Title :
4.2 mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition
Author :
Nishida, T. ; Takaya, M. ; Kakinuma, S. ; Kaneko, T. ; Shimoda, T.
Author_Institution :
Seiko Epson Corp., Nagano, Japan
Abstract :
We achieved high output power GaInNAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 1261.5 nm. The continuous wave (CW) output power at room temperature reached to 4.2 mW with the slope efficiency of 0.52 W/A.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; semiconductor growth; surface emitting lasers; 1261.5 nm; 20 degC; 4.2 mW; GaInNAs; GaInNAs VCSEL; continuous wave output power; long-wavelength laser; metalorganic chemical vapor deposition; room temperature; semiconductor growth; vertical-cavity surface-emitting lasers; Chemical vapor deposition; Distributed Bragg reflectors; Gallium arsenide; Power generation; Power lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382761
