DocumentCode :
2355215
Title :
P2I-1 Surface Acoustic Wave Ultraviolet Sensor Using Epitaxial AlGaN/(Al,Ga)N Film
Author :
Koh, K. ; Nakai, K. ; Negisi, T. ; Yokota, M. ; Hohkawa, K.
Author_Institution :
Fac. of Eng., Kanagawa Inst. of Technol.
fYear :
2006
fDate :
2-6 Oct. 2006
Firstpage :
1774
Lastpage :
1777
Abstract :
In order to realize SAW ultraviolet sensor with short variable wavelength selectivity and high sensitivity, we study a SAW ultraviolet sensor using the AlGaN/(Al, Ga)N/Al2O3 system. When irradiating UV light on the surface of propagating path, the shift of frequency and change of insertion loss can be measured. Experimental results indicate that this sensor have good wavelength selectivity and could detect the weaker UV light power with several microwatt
Keywords :
semiconductor thin films; surface acoustic wave sensors; thin film sensors; ultraviolet detectors; AlGaN-(AlGa)N-Al2O3; SAW ultraviolet sensor; UV light irradiation; epitaxial AlGaN/(Al,Ga)N film; insertion loss; short variable wavelength selectivity; surface acoustic wave; Acoustic sensors; Acoustic waves; Aluminum gallium nitride; Frequency measurement; Insertion loss; Loss measurement; Optical propagation; Propagation losses; Sensor systems; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
ISSN :
1051-0117
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
Type :
conf
DOI :
10.1109/ULTSYM.2006.446
Filename :
4152302
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2355215
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