Room temperature operation of InAs-quantum-dot laser utilizing GaAs-photonic-crystal-slab-based line-defect waveguide with optical pump

Author

Sugimoto, Y. ; Inoue, K. ; Ikeda, N. ; Ohkouch, S. ; Tanaka, Y. ; Nakamura, Y. ; Nakamura, H. ; Sasaki, H. ; Ishida, K. ; Asakawa, K.

Author_Institution

Femtosecond Technol. Res. Assoc., Tsukuba, Japan

fYear

2004

fDate

25-25 Sept. 2004

Firstpage

81

Lastpage

82

Abstract

Room temperature operation of lasing from optically-pumped InAs quantum dots embedded in a line defect waveguide in a two-dimensional air-bridge type GaAs-photonic crystal slab is demonstrated. The lasing is found to occur without Fabry-Perot mirrors, and also without any reflection at the sample edge. A distributed feedback mechanism at the band edge with a vanishingly-small group-velocity is responsible for the present lasing.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical pumping; optical waveguides; photonic crystals; quantum dot lasers; 20 degC; GaAs; GaAs-photonic-crystal-slab; InAs; InAs-quantum-dot laser; band edge; distributed feedback mechanism; line-defect waveguide; optical pump; room temperature operation; vanishingly-small group-velocity; Fabry-Perot; Laser excitation; Optical feedback; Optical pumping; Optical waveguides; Pump lasers; Quantum dot lasers; Slabs; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International

Conference_Location

Matsue-shi

Print_ISBN

0-7803-8627-2

Type

conf

DOI

10.1109/ISLC.2004.1382765

Filename

1382765