DocumentCode :
2355266
Title :
High-efficiency InGaAs QW distributed Bragg reflector laser with curved grating for squeezed light generation
Author :
Uemukai, Masahiro ; Nozu, Shunsuke ; Suhara, Toshiaki
Author_Institution :
Dept. of Electron. Eng., Osaka Univ., Japan
fYear :
2004
fDate :
25-25 Sept. 2004
Firstpage :
83
Lastpage :
84
Abstract :
A high-efficiency InGaAs quantum-well curved-DBR laser was designed and fabricated using selective-area quantum-well disordering technique. Ultra low noise characteristic below the standard quantum limit was achieved from the monolithic curved-DBR laser.
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser noise; optical design techniques; optical squeezing; quantum well lasers; InGaAs; InGaAs QW distributed Bragg reflector laser; curved grating; selective-area quantum-well disordering technique; squeezed light generation; ultralow noise characteristic; Bragg gratings; Distributed Bragg reflectors; Indium gallium arsenide; Laser modes; Laser noise; Pump lasers; Quantum well lasers; Reflectivity; Semiconductor device noise; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
Type :
conf
DOI :
10.1109/ISLC.2004.1382766
Filename :
1382766
Link To Document :
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