• DocumentCode
    2355305
  • Title

    Thermally-induced soft errors in nanoscale CMOS circuits

  • Author

    Li, H. ; Mundy, J. ; Paterson, W. ; Kazazis, D. ; Zaslavsky, A. ; Bahar, R.I.

  • Author_Institution
    Div. of Eng., Brown Univ., Providence, RI
  • fYear
    2007
  • fDate
    21-22 Oct. 2007
  • Firstpage
    62
  • Lastpage
    69
  • Abstract
    Electrical noise will play an increasingly critical role in future nanoscale CMOS circuit operation characterized by lower supply voltages VDD and smaller device sizes. Both of these downscaling approaches reduce the margin of immunity to thermal noise, alpha particle strikes, and threshold voltage variations. This paper investigates the noise probability distributions for both equilibrium and non-equilibrium logic states of advanced CMOS flip-flops operated at ultra-low VDD. The theoretical distribution of transition times from one stable operation point to the other stable operation point is also derived, which is a useful representation of the soft error rate. It is shown that such nanoscale flip-flop designs are extremely sensitive to threshold variations, reducing average failure time to a few days. Monte Carlo simulations are provided to validate the theoretical model and its predictions.
  • Keywords
    CMOS integrated circuits; Monte Carlo methods; flip-flops; integrated circuit design; integrated circuit modelling; low-power electronics; nanoelectronics; Monte Carlo simulations; electrical noise; lower supply voltages VDD; nanoscale CMOS circuits; nanoscale flip flop designs; noise probability distributions; smaller device sizes; soft error rate; thermally induced soft errors; transition times; Alpha particles; CMOS logic circuits; Circuit noise; Error analysis; Flip-flops; Logic devices; Nanoscale devices; Noise reduction; Probability distribution; Threshold voltage; birth-death queue; flip-flop; noise; soft errors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures, 2007. NANOSARCH 2007. IEEE International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-1790-2
  • Electronic_ISBN
    978-1-4244-1791-9
  • Type

    conf

  • DOI
    10.1109/NANOARCH.2007.4400859
  • Filename
    4400859