Noise characteristics of GaInNAsSb 1.3 μm-range VCSEL with optical feedback for isolator-free module

Author

Ariga, M. ; Kageyama, T. ; Setiagung, C. ; Ikenaga, Y. ; Kumada, K. ; Hama, T. ; Iwai, N. ; Shimizu, H. ; Nishikata, K. ; Kasukawa, A. ; Arai, M. ; Koyama, F.

Author_Institution

Semicond. R&D Center, Furukawa Electr. Co. Ltd., Yokohama, Japan

fYear

2004

fDate

25-25 Sept. 2004

Firstpage

87

Lastpage

88

Abstract

The reflection-noise characteristics of 1.3 μm-range VCSELs are presented for the first time. It is theoretically and experimentally found that the increase of relaxation-oscillation-frequencies was effective for the sensitivity of optical feedback in single-mode long-wavelength VCSELs.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser feedback; laser modes; laser noise; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; 1.3 mum; GaInNAsSb; GaInNAsSb VCSEL; isolator-free module; optical feedback; reflection-noise characteristics; relaxation-oscillation-frequencies; single-mode long-wavelength VCSEL; Equations; Fiber lasers; Frequency estimation; Laser feedback; Optical devices; Optical feedback; Optical noise; Optical transmitters; Semiconductor device noise; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International

Conference_Location

Matsue-shi

Print_ISBN

0-7803-8627-2

Type

conf

DOI

10.1109/ISLC.2004.1382768

Filename

1382768