DocumentCode
2355336
Title
Reducing internal field effects with high aluminum AlGaN quantum wells
Author
Chow, W.W. ; Wieczorek, S. ; Fischer, A.J. ; Crawford, M.H. ; Allerman, A.A. ; Lee, S.R.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
89
Lastpage
90
Abstract
Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.
Keywords
aluminium compounds; gallium compounds; ground states; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; AlGaN quantum wells; aluminum concentration; heavy hole-crystal field split hole ground state transition; internal field effects reduction; Aluminum gallium nitride; Biomedical optical imaging; Charge carrier processes; Chemical lasers; Laser transitions; Light emitting diodes; Quantum well devices; Quantum well lasers; Quantum wells; Stationary state;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382769
Filename
1382769
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