• DocumentCode
    235535
  • Title

    Nano size cerium hydroxide slurry for scratch-free CMP process

  • Author

    Tanaka, T. ; Minami, Hisataka ; Akutsu, Toshiaki ; Iwano, Tomohiro ; Hidaka, Takahiro ; Shinoda, Takashi ; Sakurai, Haruaki ; Nobe, Shigeru

  • Author_Institution
    Adv. Integrated Mater. Bus. Sector, Hitachi Chem. Co., Ltd., Hitachi, Japan
  • fYear
    2014
  • fDate
    19-21 Nov. 2014
  • Firstpage
    22
  • Lastpage
    24
  • Abstract
    We report recent progress in a novel cerium hydroxide polishing slurry with particle size of about 5 nm nano size cerium hydroxide (NSC) abrasive. NSC has succeeded in omitting particles over 1 μm, and in reducing scratches to 1/30 of those with calcined ceria slurry. Even though, NSC maintains oxide removal rate similar to conventional ceria. Mixing NSC with the specific additives brought out tunable polishing of SiO2, SiN, and poly-Si.
  • Keywords
    cerium; chemical mechanical polishing; silicon compounds; Ce; NSC; SiN; SiO2; cerium hydroxide polishing slurry; nanosize cerium hydroxide slurry; oxide removal rate; scratch-free CMP process; Additives; Atmospheric measurements; Cerium; Films; Particle measurements; Silicon compounds; Slurries;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Planarization/CMP Technology (ICPT), 2014 International Conference on
  • Conference_Location
    Kobe
  • Print_ISBN
    978-1-4799-5556-5
  • Type

    conf

  • DOI
    10.1109/ICPT.2014.7017236
  • Filename
    7017236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=235535