Title :
Temperature, modulation and reliability characteristics of 1.3 μm-VCSELs on InP with AlGaInAs/InP lattice matched DBR
Author :
Nishiyama, Nobuhiko ; Caneau, Catherine ; Hall, Ben ; Guryanov, Georgiy ; Hu, Martin ; Liu, Xingsheng ; Bhat, Raj ; Zah, Chung-en
Author_Institution :
Corning Inc., NY, USA
Abstract :
Lasing operation up to 125 °C of 1.3 μm InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 °C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser modes; laser reliability; laser transitions; life testing; optical communication equipment; optical modulation; optical testing; semiconductor device reliability; semiconductor device testing; semiconductor lasers; surface emitting lasers; thermo-optical devices; 0.6 mW; 1.3 mum; 10 Gbit/s; 10 km; 85 degC; AlGaInAs-InP; AlGaInAs/InP lattice matched DBR; InP; InP-based VCSEL; modulation; reliability; single mode power; Dielectric substrates; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; Lattices; Mirrors; Power generation; Signal analysis; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382783
