Stable polarization operation of 1.3 μm-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding

Author

Okuno, Y.L. ; Gan, K.-G. ; Chou, H.-F. ; Chiu, Y.J. ; Wang, C. ; Wu, S. ; Geske, J. ; Bjorlin, E.S. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

25-25 Sept. 2004

Firstpage

117

Lastpage

118

Abstract

We present stable polarization of a long-wavelength VCSEL under DC operation and high-speed modulation. It was fabricated by wafer bonding of a (311)B InP-based active region to (100) GaAs-based DBRs.

Keywords

distributed Bragg reflector lasers; gallium arsenide; high-speed optical techniques; indium compounds; laser stability; laser transitions; optical fabrication; optical modulation; quantum well lasers; surface emitting lasers; wafer bonding; 1.3 mum; AlGaAs-GaAs; GaAs-based DBR; InGaAsP; InP-based active region; VCSEL; high-speed modulation; orientation-mismatched wafer bonding; stable polarization operation; vertical cavity surface emitting laser; Distributed Bragg reflectors; Etching; Laser excitation; Laser stability; Optical polarization; Quantum well devices; Strontium; Surface emitting lasers; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International

Conference_Location

Matsue-shi

Print_ISBN

0-7803-8627-2

Type

conf

DOI

10.1109/ISLC.2004.1382784

Filename

1382784