DocumentCode
2355721
Title
High power 660-nm laser diodes for recordable dual layer
Author
Shibata, K. ; Yoshida, Y. ; Sasaki, M. ; Ono, K. ; Horie, J. ; Yagi, T. ; Nishimura, T.
Author_Institution
High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
121
Lastpage
122
Abstract
A high power 660 nm laser diode (LD) with very high kink level over 300 mW is realized by reduction of the internal loss and optimization of the ridge shape. It is promising for recordable dual layer DVD drives.
Keywords
digital versatile discs; optical losses; semiconductor lasers; 660 nm; high power laser diodes; internal loss reduction; kink level; recordable dual layer DVD drives; ridge shape optimization; DVD; Diode lasers; Memory; Optical losses; Optical waveguides; Plasma measurements; Plasma temperature; Shape control; Temperature dependence; Yagi-Uda antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382786
Filename
1382786
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