DocumentCode :
2355874
Title :
A medium voltage fully controllable solid state switch for Klystrom modulator
Author :
Welleman, A. ; Gekenidis, S. ; Leutwyler, R.
Author_Institution :
Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
fYear :
2010
fDate :
23-27 May 2010
Firstpage :
174
Lastpage :
177
Abstract :
The paper will describe the specification, design, production and test of a fully controllable solid state on-off switch in IGCT-technology. (IGCT = Integrated Gate Commutated Thyristor) This type of switches is often used for linear particle beam accelerators and successful in use in several Institutes and National Laboratories to drive long pulse Klystron Modulators. The described solid state switch is rated for 4.4 kVdc, 1850 A peak, 2 ms pulse and 2 Hz repetition rate under normal conditions and can turn-off 3700 A under fault conditions and a max. peak voltage of 9 kV. The IGCT´s used are commercially available devices and have a 91 mm silicon wafer with a monolithic integrated freewheeling diode. To reach a high reliability 3 devices of 4.5 kV blocking voltage are used in series connection which gives the switch one redundant device and a large silicon area to enable a high switch-off current in case of klystron arcing. The rated current of 1850 A is switched continuously at 2 Hz, and therefore air convection cooling can be used. The described switch comes as ready-to-use design including isolated auxiliary power supply, optical triggering and optical feedback.
Keywords :
modulators; optical feedback; switching circuits; thyristor circuits; Klystrom modulator; auxiliary power supply; current 1850 A; current 3700 A; frequency 2 Hz; integrated gate commutated thyristor; linear particle beam accelerators; medium voltage fully controllable solid state switch; monolithic integrated freewheeling diode; optical feedback; optical triggering; solid state on-off switch in IGCT-technology; voltage 9 kV; Assembly; Driver circuits; Klystrons; Modulation; Optical switches; Power supplies; IGCT; On-Off switch; Reverse Conducting; Soid State;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator and High Voltage Conference (IPMHVC), 2010 IEEE International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7131-7
Type :
conf
DOI :
10.1109/IPMHVC.2010.5958322
Filename :
5958322
Link To Document :
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