Title :
Double gate MOS device having IGBT and MCT performances
Author :
Momota, Seiji ; Otsuki, Masahito ; Sakurai, Kenya
Author_Institution :
Fuji Electric Co. Ltd.
Keywords :
Bipolar transistors; Current density; Frequency; Insulated gate bipolar transistors; MOS devices; MOSFETs; Numerical simulation; Power semiconductor switches; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991232
