• DocumentCode
    2355958
  • Title

    A study on IGBT´s steady state SOA with newly developed simulation

  • Author

    Nakayama, Kazuya ; Nakagawa, Akio

  • Author_Institution
    Toshiba Research and Development Center
  • fYear
    1992
  • fDate
    1992
  • Firstpage
    34
  • Lastpage
    38
  • Keywords
    Bipolar transistors; Charge carrier processes; Computational modeling; Controllability; Current density; Impact ionization; Insulated gate bipolar transistors; Semiconductor optical amplifiers; Steady-state; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
  • Type

    conf

  • DOI
    10.1109/ISPSD.1992.991233
  • Filename
    991233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2355958