DocumentCode
235603
Title
Metal CMP: Perfecting surfaces
Author
Balan, Viorel ; Seignard, Aurelien ; Euvrard, Catherine ; Chaffard, Clement ; Scevola, Daniel ; Rivoire, Maurice
Author_Institution
LETI, CEA, Grenoble, France
fYear
2014
fDate
19-21 Nov. 2014
Firstpage
116
Lastpage
120
Abstract
This paper presents the development of CMP process optimization in order to obtain very good bondability of tungsten wafers. Surface quality of polished tungsten wafers under different conditions is analyzed through statistical tools like standard deviation, skewness and kurtosis. Good surface quality for planarized wafers is obtained by polishing under optimized conditions process, allowing highly improved bonding quality, as shown by Scanning Acoustic Microscopy.
Keywords
chemical mechanical polishing; planarisation; tungsten; CMP process optimization; W; good bondability; kurtosis; metal CMP; planarized wafer; scanning acoustic microscopy; skewness; standard deviation; surface quality; tungsten wafer; Bonding; Materials; Planarization; Rough surfaces; Surface roughness; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location
Kobe
Print_ISBN
978-1-4799-5556-5
Type
conf
DOI
10.1109/ICPT.2014.7017259
Filename
7017259
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