DocumentCode :
235603
Title :
Metal CMP: Perfecting surfaces
Author :
Balan, Viorel ; Seignard, Aurelien ; Euvrard, Catherine ; Chaffard, Clement ; Scevola, Daniel ; Rivoire, Maurice
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2014
fDate :
19-21 Nov. 2014
Firstpage :
116
Lastpage :
120
Abstract :
This paper presents the development of CMP process optimization in order to obtain very good bondability of tungsten wafers. Surface quality of polished tungsten wafers under different conditions is analyzed through statistical tools like standard deviation, skewness and kurtosis. Good surface quality for planarized wafers is obtained by polishing under optimized conditions process, allowing highly improved bonding quality, as shown by Scanning Acoustic Microscopy.
Keywords :
chemical mechanical polishing; planarisation; tungsten; CMP process optimization; W; good bondability; kurtosis; metal CMP; planarized wafer; scanning acoustic microscopy; skewness; standard deviation; surface quality; tungsten wafer; Bonding; Materials; Planarization; Rough surfaces; Surface roughness; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4799-5556-5
Type :
conf
DOI :
10.1109/ICPT.2014.7017259
Filename :
7017259
Link To Document :
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