DocumentCode

2356042

Title

A novel dmos structure for 1. 5 μm rule Bi-CMOS process

Author

Fujishima, Naoto ; Yano, Yukio ; Tsuchiya, Kazuhiro

Author_Institution

Fuji Electric Corporate Research and Development, Ltd.

fYear

1992

fDate

1992

Firstpage

52

Lastpage

57

Keywords

Analytical models; Capacitance; Electrodes; Epitaxial layers; Fabrication; Flowcharts; Implants; Lattices; MOSFETs; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on

Type

conf

DOI

10.1109/ISPSD.1992.991237

Filename

991237