Title :
InGaAsP/InP gain-levered tunable lasers
Author :
Huthinson, J.M. ; Johannson, L.A. ; Getty, J.T. ; Henness, Jeffrey A. ; Coldren, Larry A.
Author_Institution :
Strategic Technol., Intel Corp., Santa Barbara, CA, USA
Abstract :
A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to >2.5 Gb/s.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser tuning; optical modulation; semiconductor lasers; CW differential efficiency; InGaAsP-InP; InGaAsP/InP gain-levered tunable lasers; hysteresis; Fiber lasers; Hysteresis; Indium phosphide; Laser noise; Masers; Mirrors; Optical design; Optical devices; Optical waveguides; Tunable circuits and devices;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382799
