DocumentCode :
235609
Title :
A theoretical study on rate accelerator for Si CMP
Author :
Endou, Akira ; Suzuki, Shota ; Akatsuka, Tomohiko ; Sugai, Kazumi
Author_Institution :
CMP R&D Section, CMP Department, FUJIMI INCORPORATED R&D Center, Kakamigahara city, Gifu Prefecture 509-0109, Japan
fYear :
2014
fDate :
19-21 Nov. 2014
Firstpage :
124
Lastpage :
124
Abstract :
A theoretical analysis of the roles of rate accelerator for Si CMP processes is of paramount importance in the design of more effective slurries. In this study, the possible factors related to the removal rate of Si were analyzed by means of computational chemistry methods. As a result, it was found that there exists the relation between the ratios of the experimental removal rates and the ratios of the calculated bond strengths of Si-Si.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location :
Kobe, Japan
Print_ISBN :
978-1-4799-5556-5
Type :
conf
DOI :
10.1109/ICPT.2014.7017261
Filename :
7017261
Link To Document :
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