Effect of the high input capacitance of 1200 V trench IGBT on the switching characteristics under inductive load

Author

Azzopardi, S. ; Benmansour, A. ; Vinassa, J.M. ; Briat, O. ; Woirgard, E.

Author_Institution

IXL-CNRS UMR, Bordeaux I Univ., Talence

fYear

2005

fDate

11-14 Sept. 2005

Abstract

In this study, we focus on the effect of the input capacitance of 1200 V Trench (T) IGBT on the switching waveforms under clamped inductive load. For a given gate resistance, due to the trench gate oxide structure, the trench device presents a higher input impedance than the planar (P) IGBT, which is responsible for a high switching time during turn-on. In the case of the trench device, whereas the gate voltage waveforms are relatively usual, the collector current waveforms are strongly modified compared to the planar device. The influence of the gate resistance value on the switching waveforms during turn-on and turn-off is analyzed in details with the help of experimental data. Some additional results allowing to see the influence of the dv/dt and based on simulation are also presented

Keywords

power semiconductor switches; thyristors; 1200 V; IGBT; collector current waveforms; gate resistance value; gate voltage waveforms; inductive load; switching waveforms; trench gate oxide structure; Capacitance; Circuit testing; Current density; Impedance; Insulated gate bipolar transistors; Process control; Shape; Temperature sensors; Uniform resource locators; Voltage; Device Characterisation; IGBT;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219278

Filename

1665468