DocumentCode :
2356413
Title :
A new generation high speed low loss IGBT module
Author :
Majumdar, G. ; Yamashita, J. ; Nishihara, H. ; Tomomatsu, Y. ; Soejima, N. ; Tabata, M. ; Hagino, H.
Author_Institution :
Mitsubishi Electric Corporation Fukuoka Works
fYear :
1992
fDate :
1992
Firstpage :
168
Lastpage :
171
Keywords :
Bipolar transistors; Character generation; Cities and towns; Diodes; Frequency; Insulated gate bipolar transistors; MOSFET circuits; Noise reduction; Power generation; Pulse width modulation inverters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type :
conf
DOI :
10.1109/ISPSD.1992.991257
Filename :
991257
Link To Document :
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