DocumentCode
2356413
Title
A new generation high speed low loss IGBT module
Author
Majumdar, G. ; Yamashita, J. ; Nishihara, H. ; Tomomatsu, Y. ; Soejima, N. ; Tabata, M. ; Hagino, H.
Author_Institution
Mitsubishi Electric Corporation Fukuoka Works
fYear
1992
fDate
1992
Firstpage
168
Lastpage
171
Keywords
Bipolar transistors; Character generation; Cities and towns; Diodes; Frequency; Insulated gate bipolar transistors; MOSFET circuits; Noise reduction; Power generation; Pulse width modulation inverters;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type
conf
DOI
10.1109/ISPSD.1992.991257
Filename
991257
Link To Document