Title :
A 180MW, 450kV solid state modulator based on Press Pack IGBT technology
Author :
Ortiz, G. ; Müsing, A. ; Biela, J. ; Bortis, D. ; Kolar, J.W.
Author_Institution :
Power Electron. Syst. Lab., ETH Zurich, Zurich, Switzerland
Abstract :
A new solid state power modulator for free electron laser applications is studied. This modulator comprises a 4.5kV Press Pack IGBT module that can handle pulsed currents higher than 3kA. The reliability of this module concerning current distribution among the paralleled IGBT chips is studied, where the internal parasitic components and couplings causing the asymmetries are extracted by means of the Partial Element Equivalent Circuit method. Simulated waveforms showing the currents in each IGBT chip during switching transients are revised together with the dissipated losses for different pulse durations.
Keywords :
current distribution; equivalent circuits; free electron lasers; insulated gate bipolar transistors; modulators; power semiconductor switches; current distribution; free electron laser applications; internal parasitic components; partial element equivalent circuit method; power 180 MW; press pack IGBT technology; pulsed currents; simulated waveforms; solid state modulator; switching transients; voltage 4.5 kV; voltage 450 kV; Conductors; Copper; Current distribution; Heat sinks; Insulated gate bipolar transistors; Modulation; Presses;
Conference_Titel :
Power Modulator and High Voltage Conference (IPMHVC), 2010 IEEE International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7131-7
DOI :
10.1109/IPMHVC.2010.5958353
