DocumentCode :
2356444
Title :
A study of the resurf principle for thin epitaxial layer high voltage integrated circuits
Author :
Narayanan, E. M Sankara ; Amaratunga, G. ; Milne, W.I.
Author_Institution :
Cambridge University
fYear :
1992
fDate :
1992
Firstpage :
172
Lastpage :
175
Keywords :
Avalanche breakdown; Breakdown voltage; Diodes; Doping; Electric breakdown; Epitaxial layers; Low voltage; Numerical simulation; Power engineering and energy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type :
conf
DOI :
10.1109/ISPSD.1992.991258
Filename :
991258
Link To Document :
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