Title :
A process oriented VDMOSFET model for circuit simulation
Author :
Soppa, W. ; Hanseler, J.
Author_Institution :
SIEMENS AG
Keywords :
Bipolar transistors; Capacitance; Circuit simulation; Coupling circuits; Equations; Immune system; Isolation technology; Physics; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991261
