DocumentCode
2356492
Title
A process oriented VDMOSFET model for circuit simulation
Author
Soppa, W. ; Hanseler, J.
Author_Institution
SIEMENS AG
fYear
1992
fDate
1992
Firstpage
184
Lastpage
187
Keywords
Bipolar transistors; Capacitance; Circuit simulation; Coupling circuits; Equations; Immune system; Isolation technology; Physics; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type
conf
DOI
10.1109/ISPSD.1992.991261
Filename
991261
Link To Document