DocumentCode

2356553

Title

Application of a new fabrication technique to GaAs SIThy using LPE

Author

Tomita, A. ; Kamiya, T. ; Kimura, M. ; Tanaka, A. ; Sukegakva, T.

Author_Institution

Shizuoka Univ.

fYear

1992

fDate

1992

Firstpage

198

Lastpage

201

Keywords

Electron mobility; Epitaxial growth; Fabrication; Gallium arsenide; Impurities; Lattices; Low voltage; Photonic band gap; Thyristors; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on

Type

conf

DOI

10.1109/ISPSD.1992.991264

Filename

991264