Title :
High voltage IGBT with a new semi-resistive film over edge structure
Author :
Ryu Saitah ; Nishiura, Akira ; Sakurai, Kenya
Author_Institution :
Fuji EIectric Co. Ltd.
Keywords :
Frequency; Insulated gate bipolar transistors; Numerical simulation; Physics; Power semiconductor devices; Production facilities; Switching circuits; Tellurium; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991266
