A new modeling and gate driver design of SI-Thyristor using by 2-port network

It is expected that Static Induction Thyristor (SI-Thyrsitor) has a great potential to substitute thyristor based power semiconductors on high voltage industrial field because of its faster turn-on time, operating frequency, higher di/dt and dV/dt, and comparatively higher reverse voltage endurance than the power semiconductors. However, due to its thyristor-based structure, the direct switching current commutation between the main body and the gate layer in the SI-Thyristor makes high voltage with fast operating frequency difficult. Thus, to maximize faster turn-on transient time with gate delay time in the SI-Thyristor, it is proceeded 2 port circuit analysis which is based on the transient turn-on switching experiment while switching conditions which indicates gate voltage waveform with dead time modulation, amplitude of applied high voltage across anode to cathode.