DocumentCode
2356609
Title
A new junction termination technique for power devices: resurf LDMOS with SIPOS layers
Author
Charitat, G. ; Bouanane, M.A. ; Rossel, P.
Author_Institution
CNRS
fYear
1992
fDate
1992
Firstpage
213
Lastpage
216
Keywords
Bipolar transistors; Conductivity; Diodes; Doping; Electric breakdown; Integral equations; Medium voltage; Numerical analysis; Poisson equations; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type
conf
DOI
10.1109/ISPSD.1992.991268
Filename
991268
Link To Document