Improvement in on-resistance of a high-purity channel sit by a shielded gate structure

Author

Yano, I. ; Kim, C.-W. ; Kimura, M. ; Tanaka, A. ; Motoyama, S. ; Sukegawa, T.

Author_Institution

Shizuoka Univ.

fYear

1992

fDate

1992

Firstpage

226

Lastpage

229

Keywords

Breakdown voltage; Conductivity; Doping profiles; Geometry; Numerical simulation; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on

Type

DOI

10.1109/ISPSD.1992.991271

Filename

991271

Link To Document