Title :
Improvement in on-resistance of a high-purity channel sit by a shielded gate structure
Author :
Yano, I. ; Kim, C.-W. ; Kimura, M. ; Tanaka, A. ; Motoyama, S. ; Sukegawa, T.
Author_Institution :
Shizuoka Univ.
Keywords :
Breakdown voltage; Conductivity; Doping profiles; Geometry; Numerical simulation; Solid modeling;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991271
