• DocumentCode
    2356768
  • Title

    Optimization of 500V, P-channel VDMOS-LIGBT transistors

  • Author

    Parthasarathy, V. ; Chow, T.P.

  • Author_Institution
    Rensselaer Polytechnic Institute
  • fYear
    1992
  • fDate
    1992
  • Firstpage
    244
  • Lastpage
    245
  • Keywords
    Bipolar transistors; Charge carrier lifetime; Charge carrier processes; Conductivity; Doping; Fingers; Insulated gate bipolar transistors; MOSFET circuits; Particle measurements; Turning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
  • Type

    conf

  • DOI
    10.1109/ISPSD.1992.991277
  • Filename
    991277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2356768