DocumentCode
2356793
Title
Hybrid packaging technique for high power density circuit
Author
Nguyen, Nguyen Binh ; Jones, Franklin B.
Author_Institution
Westinghouse Electronic System Group, Baltimore, MD, USA
fYear
1991
fDate
12-14 Feb 1991
Firstpage
105
Lastpage
109
Abstract
Downsizing or miniaturizing power circuits for the 1990´s power conversion technologies requires high and very high power density (greater than 100 watt/in3) packaging capability. Among different packaging techniques, the hybrid packaging technique is preferred for many applications because it has a good reliability history. This technique utilizes newly developed processes and materials such as direct bonded copper and diamond coated substrates to significantly improve thermal management and achieve optimal thermal resistance (less than 0.4°C/watt). A 124 watt/cm2 (800 watt/in2) power density hybrid packaging example is presented here. The results of thermal design and evaluation of this hybrid are discussed
Keywords
circuit layout; hybrid integrated circuits; power convertors; power integrated circuits; thermal resistance; C; MCT switch hybrid; diamond coated substrates; direct bonded Cu; high power density circuit; hybrid packaging technique; optimal thermal resistance; power conversion technologies; reliability; thermal design; thermal management; Bonding; Copper; Electronic packaging thermal management; Power conversion; Power dissipation; Switches; Switching circuits; Temperature; Thermal management; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 1991. SEMI-THERM VII. Proceedings., Seventh Annual IEEE
Conference_Location
Phoenix, AZ
Print_ISBN
0-87942-664-0
Type
conf
DOI
10.1109/STHERM.1991.152922
Filename
152922
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