Active gate driver for dv/dt control and active voltage clamping in an IGBT stack

For high voltages converters stacks of IGBTs can be used if the static and dynamic voltage sharing among the IGBTs can be applied. dV _CE/dt should also be controlled in order not to damage insulation material. This paper describes theory and measurements of an active gate driver for stacking IGBTs. For the measurements two series connected standard IGBTs made for hard switching applications are used. Problems are shown and proposals for improvements are given