Title :
CMP of GaN using sulfate radicals generated by metal catalyst
Author :
Zou Chunli ; Pan Guoshun ; Xu Li ; Shi Xiaolei ; Yuyu Liu
Author_Institution :
State Key Lab. of Tribology, Tsinghua Univ., Shenzhen, China
Abstract :
A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO4-) oxidizer and Fe2+ activator in slurry is presented. The results indicate that complexing agent with Fe2+ activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm.
Keywords :
III-V semiconductors; atomic force microscopy; catalysts; chemical mechanical polishing; gallium compounds; slurries; wide band gap semiconductors; AFM; CMP; Fe2+ activator; GaN; atomic force microscope; atomically smooth gallium nitride surface; average surface roughness; chemical mechanical polishing; high material removal rate; metal catalyst; slurry; sulfate radical oxidizer; Chemicals; Gallium nitride; Rough surfaces; Slurries; Surface morphology; Surface roughness; Surface treatment;
Conference_Titel :
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4799-5556-5
DOI :
10.1109/ICPT.2014.7017290
