DocumentCode
2356904
Title
Simulation of a 700 V high-voltage device structure on a thin SOI - substrate bias effect on SOI devices
Author
Matsudai, Tomoko ; Nakagawa, Akio
Author_Institution
Toshiba R&D Center
fYear
1992
fDate
1992
Firstpage
272
Lastpage
277
Keywords
Anodes; Breakdown voltage; Cathodes; Dielectric substrates; Diodes; Impurities; Isolation technology; Power integrated circuits; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type
conf
DOI
10.1109/ISPSD.1992.991285
Filename
991285
Link To Document