DocumentCode
2356996
Title
Modeling and characterization of SIPOS passivated, high voltage, N- and P-channel lateral resurf type DMOSFETs
Author
Sakai, T. ; So, K.C. ; Shen, Z. ; Chow, T.P.
Author_Institution
Rensselaer Polytechnic Institute
fYear
1992
fDate
1992
Firstpage
288
Lastpage
292
Keywords
Analytical models; Capacitance-voltage characteristics; Conductivity; Contact resistance; Impurities; Permittivity; Photonic band gap; Power integrated circuits; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type
conf
DOI
10.1109/ISPSD.1992.991288
Filename
991288
Link To Document