• DocumentCode
    2357019
  • Title

    A novel power MOSFET using drain trench technology

  • Author

    Vera, Eduardo S. ; Yamashita, Nobuhiko ; Yachi, Toshiaki

  • Author_Institution
    NTT Advanced Technology Corporation
  • fYear
    1992
  • fDate
    1992
  • Firstpage
    294
  • Lastpage
    299
  • Keywords
    Capacitance; Dielectric breakdown; Doping; Geometry; Laboratories; MOSFET circuits; Numerical simulation; Power MOSFET; Surface resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
  • Type

    conf

  • DOI
    10.1109/ISPSD.1992.991290
  • Filename
    991290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2357019