DocumentCode
235703
Title
Planarization of 4H-SiC(0001) by catalyst-referred etching using pure water etchant
Author
Isohashi, Ai ; Sano, Yousuke ; Yamauchi, Kazuto
Author_Institution
Dept. of Precision Sci. & Technol., Osaka Univ., Suita, Japan
fYear
2014
fDate
19-21 Nov. 2014
Firstpage
273
Lastpage
274
Abstract
Catalyst-referred etching (CARE) is a noble planarization method which does not require abrasives. In this paper, we applied CARE with pure water to a 4H-SiC substrate in order to evaluate the removal rate and the surface roughness of the processed surface. The removal rate for the 4H-SiC(0001) on-axis wafer was found to be 2 nm/h while, in the AFM images, step-terrace structures were clearly observed on the processed surface.
Keywords
atomic force microscopy; etching; hydrogen; planarisation; silicon compounds; surface roughness; wide band gap semiconductors; 4H-SiC (0001) planarization method; AFM images; CARE; H-SiC; catalyst-referred etching; on-axis wafer; pure water etchant; removal rate; step-terrace structures; surface roughness; Chemicals; Etching; Planarization; Rough surfaces; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location
Kobe
Print_ISBN
978-1-4799-5556-5
Type
conf
DOI
10.1109/ICPT.2014.7017297
Filename
7017297
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