• DocumentCode
    2357069
  • Title

    High-voltage high-speed MESFETs using a standard GaAs digital IC process

  • Author

    Mok, Philip K T ; André, C. ; Salama, T.

  • Author_Institution
    University of Toronto
  • fYear
    1992
  • fDate
    1992
  • Firstpage
    309
  • Lastpage
    313
  • Keywords
    Breakdown voltage; Bridge circuits; Digital integrated circuits; Gallium arsenide; High speed integrated circuits; Implants; MESFET integrated circuits; Semiconductor materials; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
  • Type

    conf

  • DOI
    10.1109/ISPSD.1992.991293
  • Filename
    991293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2357069