Title :
300/spl deg/C operating junction temperature inverter leg investigations
Author :
Bergogne, D. ; Bevilacqua, P. ; M´Rad, S. ; Planson, D. ; Morel, H. ; Allard, B. ; Brevet, O.
Author_Institution :
Centre de Genie Electrique de Lyon, Villeurbanne
Abstract :
A silicon carbide JFET cascade sample is characterized at temperatures up to 300degC with the design of a diode-less inverter in mind. The JFET is considered as a power switch, on-off gate voltages are applied during testing, conduction capability and blocking are measured, reverse conduction is investigated experimentally. Switching losses are considered and total losses of the inverter leg are estimated
Keywords :
invertors; junction gate field effect transistors; losses; power semiconductor switches; silicon compounds; testing; wide band gap semiconductors; 300 degC; SiC; diodeless inverter; inverter leg; on-off gate voltages; operating junction temperature; power switch; reverse conduction; silicon carbide JFET; switching losses; Insulated gate bipolar transistors; Inverters; Leg; MOSFETs; Power electronics; Silicon carbide; Switching loss; Temperature; Thermal management; Voltage; JFET; SiC; high temperature converter; iniverter leg;
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
DOI :
10.1109/EPE.2005.219323
