Title :
New dielectric isolation for high voltage power ICs by single silicon poly silicon direct bonding (SPSDB) technique
Author :
Sugawara, Y. ; Inoue, Y. ; Ogawa, S. ; Kurita, S.
Author_Institution :
Hitachi Ltd.
Keywords :
Breakdown voltage; Dielectrics; Fabrication; Heat treatment; Parasitic capacitance; Power integrated circuits; Silicon; Temperature; Thermal conductivity; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991294
