Conformal low -temperature dielectric deposition process below 200°C for TSV application

A detailed study to perform low temperature (<; 200°C) PECVD TEOS-oxide deposition process with very low mechanical stress and good conformal deposition on high aspect ratio features (10:1) was done. Individual conditions that affect the oxide stress and deposition rate such as TEOS & O₂ flow rate, HF/LF power, pressure and temperature are investigated. The optimal conditions found are used to then deposited into trenches and further fine tuned to give excellent step coverage for high aspect ratio features.