Title :
Thermal interaction of semiconductor devices on copper-clad ceramic substrates
Author :
Hussein, M.M. ; Nelson, D.J. ; Elshabini-Riad, A.
Author_Institution :
Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The temperature rise due to the spacing between two heat-dissipating devices mounted on metallized or copper-clad alumina and beryllia ceramic substrates is presented. The thickness of the copper layer, the thermal conductivity of the substrate material, and the thermal resistance of the heat sink system are considered. The results show that increasing the thickness of the copper layer requires that the devices be placed farther apart to prevent thermal interaction. An increase in the copper layer thickness can significantly decrease the device temperatures on alumina but may increase temperatures on high-thermal-conductivity substrates. The results also demonstrate that the external heat sink resistance has a significant impact on the heat flow paths and temperatures in the substrate
Keywords :
copper; heat sinks; hybrid integrated circuits; metallisation; power integrated circuits; temperature distribution; thermal resistance; Al2O3; BeO; Cu layer thickness; Cu-Al2O3; Cu-BeO; ceramic substrates; heat flow paths; heat sink system; heat-dissipating devices; metallization layer; power hybrid circuits; semiconductor devices; substrate thermal conductivity; temperature rise; thermal resistance; Ceramics; Copper; Heat sinks; Metallization; Resistance heating; Semiconductor devices; Substrates; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 1991. SEMI-THERM VII. Proceedings., Seventh Annual IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-87942-664-0
DOI :
10.1109/STHERM.1991.152924
