DocumentCode :
2357318
Title :
Development of a high voltage, high frequency, fast dV/dt tester for the study of failure mechanisms in dielectric materials
Author :
Tao, Fengfeng ; Yin, Weijun ; Schweickart, Daniel
Author_Institution :
GE Global Res. Center, Niskayuna, NY, USA
fYear :
2010
fDate :
23-27 May 2010
Firstpage :
505
Lastpage :
508
Abstract :
A bipolar, high voltage, high frequency pulse generator, with fast dv/dt rise time, was designed and assembled, based on stacked MOSFET modules. This unique design was implemented for the study of the impact of transient voltage with high repetition frequency on polymer insulation materials. Due to its all solid-state component design, the generator provides easily controllable output voltage magnitude (+/-10kV), frequency (<;=20kHz), and duty cycle ratio (10-90%). Practical considerations, such as circuit layout, high voltage/current protection, EMI, thermal management, etc., are discussed in the paper. Simulation and experimental results are included to verify the generator´s performance.
Keywords :
MOSFET; dielectric materials; failure analysis; insulating materials; modules; polymers; pulse generators; EMI; bipolar high voltage high frequency pulse generator; circuit layout; dielectric material; duty cycle ratio; failure mechanism; fast dv-dt rise time; high voltage-current protection; polymer insulation material; repetition frequency; solid-state component design; stacked MOSFET module; thermal management; transient voltage; voltage -10 kV; voltage 10 kV; voltage magnitude; Electromagnetic interference; Insulation; MOSFET circuits; Power supplies; Resistors; Switches; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator and High Voltage Conference (IPMHVC), 2010 IEEE International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7131-7
Type :
conf
DOI :
10.1109/IPMHVC.2010.5958405
Filename :
5958405
Link To Document :
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