Title :
Efficient time-domain modeling of wave propagation effects in mm-wave packaged FETs
Author :
Asadi, S. ; Yagoub, M.C.E.
Author_Institution :
Sch. of Inf. Technol. & Eng. (SITE), Univ. of Ottawa, Ottawa, ON, Canada
Abstract :
In this paper, a robust time-domain model of packaged field effect transistors is presented. It efficiently includes wave propagation effects along the width of each finger and gate feeding line, making it suitable for mm-wave applications. The proposed model was demonstrated through a comparison between measured and simulated data of a 0.2μm pHEMT.
Keywords :
millimetre wave field effect transistors; time-domain synthesis; wave propagation; efficient time-domain modeling; field effect transistors; mm-wave packaged FET; wave propagation effects;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2010 12th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-8560-4
Electronic_ISBN :
978-1-4244-8561-1
DOI :
10.1109/EPTC.2010.5702618
