DocumentCode
2357449
Title
Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance
Author
Fernandez-Bolanos, Montserrat ; Dehollain, Catherine ; Nicole, Pierre ; Ionescu, Adrian M.
Author_Institution
Nanoelectronic Device Lab. (NanoLab), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
331
Lastpage
334
Abstract
This paper presents a novel high-frequency filter concept based on a single MEMS capacitive shunt structure using meander arm inductance. Tuning ranges of the central frequency in the order of 55% are experimentally demonstrated for filters operating between 13.5 GHz to 30 GHz and 17 GHz to 37 GHz. A low transmission loss of 0.44 dB and a rejection level of -20.5 dB at 17 GHz are reported. The outstanding tuning range is due to the simultaneous tunability of the MEMS capacitive switch (with a capacitance ratio Gt 1.5) and the exploitation of the voltage-controlled capacitance coupling between the meander arm inductance and the substrate.
Keywords
band-stop filters; circuit tuning; microswitches; microwave filters; capacitance ratio; frequency 13.5 GHz to 37 GHz; high-frequency filter; meander arm inductance; single RF MEMS capacitive shunt switch; tunable band-stop filter; tuning; voltage-controlled capacitance coupling; Capacitance; Filters; Frequency; Inductance; Micromechanical devices; Propagation losses; Radiofrequency microelectromechanical systems; Switches; Tuning; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location
Athens
ISSN
1930-8876
Print_ISBN
978-1-4244-4351-2
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2009.5331304
Filename
5331304
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