• DocumentCode
    2357449
  • Title

    Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

  • Author

    Fernandez-Bolanos, Montserrat ; Dehollain, Catherine ; Nicole, Pierre ; Ionescu, Adrian M.

  • Author_Institution
    Nanoelectronic Device Lab. (NanoLab), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    331
  • Lastpage
    334
  • Abstract
    This paper presents a novel high-frequency filter concept based on a single MEMS capacitive shunt structure using meander arm inductance. Tuning ranges of the central frequency in the order of 55% are experimentally demonstrated for filters operating between 13.5 GHz to 30 GHz and 17 GHz to 37 GHz. A low transmission loss of 0.44 dB and a rejection level of -20.5 dB at 17 GHz are reported. The outstanding tuning range is due to the simultaneous tunability of the MEMS capacitive switch (with a capacitance ratio Gt 1.5) and the exploitation of the voltage-controlled capacitance coupling between the meander arm inductance and the substrate.
  • Keywords
    band-stop filters; circuit tuning; microswitches; microwave filters; capacitance ratio; frequency 13.5 GHz to 37 GHz; high-frequency filter; meander arm inductance; single RF MEMS capacitive shunt switch; tunable band-stop filter; tuning; voltage-controlled capacitance coupling; Capacitance; Filters; Frequency; Inductance; Micromechanical devices; Propagation losses; Radiofrequency microelectromechanical systems; Switches; Tuning; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
  • Conference_Location
    Athens
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-4351-2
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2009.5331304
  • Filename
    5331304