Title :
Modeling of MMIC devices for determining MMIC channel temperatures during life tests
Author :
Wright, John L. ; Marks, B.W. ; Decker, K.D.
Author_Institution :
Texas Instruments Inc., Plano, TX, USA
Abstract :
Several analytical techniques were examined for predicting GaAs MMIC (monolithic microwave integrated circuit) junction temperatures to support reliability life tests. Series solution, finite difference, finite element, and boundary element methods were compared using a simple MMIC structure, and the boundary element method was found to be better for predicting MMIC junction temperatures. The series solution method, although it cannot model the plating layers on top of the device, was found to be quite useful for performing preliminary analyses. FETs on several MMIC devices were analyzed using the boundary element method. The thermal effects of several physical features and modeling assumptions were investigated. The thermal model predictions were compared with infrared imager and liquid crystal experimental data
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; boundary-elements methods; circuit reliability; difference equations; finite element analysis; gallium arsenide; integrated circuit testing; life testing; semiconductor device models; temperature distribution; temperature measurement; FETs; GaAs; MMIC channel temperatures; boundary element methods; finite difference; finite element; junction temperatures; life tests; monolithic microwave integrated circuit; reliability; series solution; Boundary element methods; Circuit testing; Gallium arsenide; Integrated circuit reliability; MMICs; Microwave devices; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits; Temperature;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 1991. SEMI-THERM VII. Proceedings., Seventh Annual IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-87942-664-0
DOI :
10.1109/STHERM.1991.152926
